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PNY Performance 8GB DDR5-5600 SO-DIMM memoria RAM, CL40, 1,1V, 1Rx16, Non-ECC, Unbuffered

PNY Performance 8GB DDR5-5600 SO-DIMM memoria RAM, CL40, 1,1V, 1Rx16, Non-ECC, Unbuffered
PNY Performance 8GB DDR5-5600 SO-DIMM memoria RAM, CL40, 1,1V, 1Rx16, Non-ECC, Unbuffered
161,27 €
Laptop users who push their systems with heavy multitasking, photo editing, or virtual machines will appreciate the immediate responsiveness that the PNY Performance 8GB DDR5-5600 SO-DIMM brings. Pop it into a compatible laptop, mini PC, or all-in-one and watch load times shrink while switching betw... Leer más
Stock AgotadoSin stock Código 3327401 Marca PNY Modelo MN8GSD55600-SB Garantía 2 años

Envíos y devoluciones

Laptop users who push their systems with heavy multitasking, photo editing, or virtual machines will appreciate the immediate responsiveness that the PNY Performance 8GB DDR5-5600 SO-DIMM brings. Pop it into a compatible laptop, mini PC, or all-in-one and watch load times shrink while switching between applications feels fluid and effortless.

Key specifications

  • Memory type: DDR5
  • Form factor: SO-DIMM (262-pin)
  • Capacity: 8 GB
  • Speed: 5600 MHz (PC5-44800)
  • CAS latency: CL40
  • Voltage: 1.1 V
  • Module configuration: 1Rx16
  • ECC: Non-ECC
  • Buffering: Unbuffered
  • JEDEC compliant

Why choose it

DDR5 technology delivers higher frequencies, improved power efficiency, and on-die ECC for enhanced data integrity. This PNY Performance module is rigorously tested for compatibility and stability, making it a dependable choice for upgrading your system. Its low 1.1V operating voltage helps reduce power consumption and heat, extending battery life in portable devices.

Ideal use cases

  • Upgrading a laptop for better multitasking and productivity
  • Building or refreshing a compact mini PC or all-in-one
  • Running memory-intensive applications like photo editing, coding, or virtual machines
  • Replacing a faulty or outdated SO-DIMM module

Good to know

This single 8GB module leaves room for future expansion—most laptops have two SO-DIMM slots. It operates at standard JEDEC timings, so no manual overclocking is required. Backed by PNY’s reputation for quality, this memory is a straightforward, reliable upgrade.

Especificaciones
Categoría
Memory Module
Componente para
Laptop, Mini PC, All-in-One PC
Configuración del módulo
1Rx16
Distribución de la memoria (módulos x capacidad)
1 x 8 GB
EAN
3536403407841
ECC
Non-ECC
Estándar JEDEC
JEDEC
Formato de la memoria
SO-DIMM
Latencia CAS
CL40
Marca
PNY
Memoria interna
8 GB
Modelo
Performance 8GB DDR5-5600 SO-DIMM
MPN
MN8GSD55600-SB
Tensión de la memoria
1.1 V
Tipo de embalaje
Single module
Tipo de memoria con búfer
Unbuffered
Tipo de memoria interna
DDR5
Velocidad de transferencia de datos de la memoria
5600 MHz
Historial de precios de los últimos 6 meses
PNY Performance 8GB DDR5-5600 SO-DIMM memoria RAM, CL40, 1,1V, 1Rx16, Non-ECC, Unbuffered
Actual
161,27 €
Mínimo
160,32 €
Máximo
189,53 €
Variación 24 h
-1,48 €   -1%
Semana
-1,16 €   -1%
Mes
+0,96 €   +1%

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